通过硅通孔
材料科学
碳纳米管
堆积
三维集成电路
堆栈(抽象数据类型)
可靠性(半导体)
消散
硅
热的
缩放比例
电子工程
电子线路
集成电路
光电子学
纳米技术
计算机科学
电气工程
功率(物理)
工程类
物理
几何学
数学
核磁共振
量子力学
气象学
热力学
程序设计语言
作者
Baohui Xu,Rongmei Chen,Jiuren Zhou,Jianing Liang
标识
DOI:10.1109/ted.2023.3297078
摘要
Carbon nanotube (CNT) is recently proposed as an alternative material for through-silicon via (TSV) to meet the requirements for high-density scaling and 3-D stacking. In this article, by establishing the physical model and applying COMSOL simulation, the electrical and thermal characteristics of CNT TSV in multilayer structures are analyzed. We find that CNT TSV has good electrical properties, comparable transmission loss with Cu TSV, and better heat dissipation capabilities, suitable for 3-D integration circuits (3DIC) applications. According to the model, we give quantitative indicators of the difficulties that the current process still needs to overcome. Furthermore, even in a multilayer stack structure, CNT TSV maintains good IR-Drop and transmission loss, while having a smaller temperature rise. More importantly, the median time-to-failure (MTTF) of CNT is better than Cu about 99.4% in the ideal case, showing outstanding reliability.
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