光电探测器
响应度
材料科学
拓扑绝缘体
光电子学
钙钛矿(结构)
比探测率
暗电流
热稳定性
功勋
钝化
图层(电子)
纳米技术
物理
量子力学
化学工程
工程类
作者
Shuo Liu,Shujie Jiao,Yong‐Min Liang,Song Yang,Yue Zhao,Dongbo Wang,Shiyong Gao,Jinzhong Wang,Liancheng Zhao,Yongfeng Li
标识
DOI:10.1002/adom.202201018
摘要
Abstract The conventional forward‐structure perovskite devices typically employ organic small molecule and noble metal as the hole transport layer (HTL) and electrode, respectively, which results in poor thermal stability and high costs. To address this issue, a HTL‐free CH 3 NH 3 PbBr 3 photodetector with the topological insulator bismuth telluride (Bi 2 Te 3 ) electrode is developed. The device exhibits apparent sensitivity to ultraviolet/visible waveband with a peak responsivity of 97.5 mA W −1 , switching ratio exceeding 10 4 , and the detectivity is up to 10 12 Jones without external bias. These figures‐of‐merit are distinguished among the reported CH 3 NH 3 PbBr 3 ‐based devices. Impressively, this device presents a light power‐modulated near‐infrared detection thanks to the contribution of topological insulator Bi 2 Te 3 , and the underlying mechanism is elaborated in‐depth. Moreover, the novel device improves significantly in short and long‐time thermal stability. Benefiting from these distinguished properties, the photodetector is imaging‐capable and a 50 × 50 pixels’ pattern with satisfactory resolution has been achieved. This work highlights the application of topological insulators on the HTL‐free perovskite photodetector, offering new insights for the future commercialization of perovskite devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI