The evolution of H+ implantation induced defects and the different cleavage behaviors under different thermal excitation in 4H-SiC during Crystal-Ion-Slicing technology

The Silicon Carbide (SiC) composite substrate fabricated by crystal-ion-slicing (CIS) technology can be an excellent material platform to realize a variety of microelectronic device functions. The difference in the surface morphology of the exfoliated films under different thermal excitation conditions was found in research. In order to explore the different cleavage behaviors resulting the differences, the basic models of defect evolution during the fabrication of SiC film by CIS technique is established based on AFM, Raman, XRD and TEM material characterizations, which can be divided into detachment, aggregation, growth, and concatenation stages. Combining the molecular dynamics simulation results and defect evolution models, the difference of the cleavage behavior leading to different surface topography under different anneal thermal excitations can be attributed to the different H2 bubble nucleation rate. The work in this paper investigates the fundamental physicochemical phenomena of defect evolution and crystal cleavage in CIS technology, and guides the improvement of heat treatment process, which is beneficial to achieve neat cleavage for the transfer of SiC single crystal film and to realize available heterogeneous integration of SiC single crystal film.