A systematic design methodology for power MOSFET gate drivers

Gate driver circuits are a key element for reliable turn on and turn off of power MOSFETs. The gate drive circuits are composed of relevant elements like gate drive IC, gate resistor, bypass capacitor, isolated power supply, etc. These elements as well as their features should be accurately selected and analyzed to ensure safe switching process of power MOSFETs. For this purpose, this paper presents a step-by-step methodology for the design of a basic gate driver circuit for power MOSFETs. The interest of the proposed design methodology is demonstrated by applying it to a case study. Also, several simulation results are presented to show the effectiveness of the proposed design methodology.