Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate Performance Parameters of 275 nm AlGaN-based UV-C LED

In this simulation paper, we have critically analyzed the highly doped p-aluminum gallium nitride (AlGaN) layer and found that electron and hole concentrations are increased by ~4.5-fold and ~1.03-fold, respectively in case of LED E with a $7 \times 10^{20} \mathrm{~cm}^{-3} \mathrm{Mg}$ dopant compared to reference LED A (with $1 \times 10^{17} \mathrm{~cm}^{-3} \mathrm{Mg}$ dopant). The enhancement of carrier concentration promotes the probability of carrier recombination in the active region and hence improves the radiative recombination (RR) rate of LED E by ~8.5-fold compared to LED A. The RR enhancement helps to improve the internal quantum efficiency by ~8.5-fold in case of LED E compared to LED A. Also, it reduces the efficiency droop and resistive losses in case of LED E by 98% and ~71.5%, respectively, compared to LED A. Hence, we may conclude that experimentally, the realization of LED E with a $7 \times 10^{20}~\mathrm{cm}^{-3} \mathrm{Mg}$ doping helps to improve the ultimate parameters of AlGaN-based UV-C LED. The electroluminescence intensity at ~275 nm confirms the emission at the UV-C region in case of all AlGaN-based UV-C LED structures.