A review on the development of ceria for chemical mechanical polishing

Chemical mechanical polishing (CMP) is widely used as an ultra-precision machining technology, which determines the final fabrication accuracy of the device. CeO2 abrasives exhibit excellent CMP performance due to the unique chemical and mechanical properties. With the increasing demand of planarization, how to improve the polishing efficiency of CeO2 abrasives in the CMP has become one of the hotspots. Over the past decades, extensive efforts have been devoted to develop the CeO2 abrasives for CMP and great progress has been obtained. Here, we present an overview on the research of CeO2 abrasives for CMP. This review starts with a brief introduction the research background and related basic concepts of CMP technology and ceria. Emphasis is placed on the development of CeO2 abrasives, assisted polishing, CMP mechanism, post-CMP cleaning and computational chemistry. Finally, the future development trend of CeO2 abrasives and the issues that need to be solved are prospected.