P‐13.11: Study on the Light Utilization Efficiency of TFT‐LCD by ITO‐Cu Structure Gate

This article investigates the effect of ITO‐Cu gate structure on the penetration rate of LCD panels. Firstly, the ITO tail range is determined through finite difference time domain simulation. During the experiment, the water content during the ITO PVD film formation process is increased to improve the ITO single film penetration rate. In addition, due to the continuous Cu film formation process leading to substrate rise, ITO crystallizes prematurely and etching is difficult. This article obtains the ITO crystallization temperature through experiments, simultaneously controlling the thickness of Cu film can effectively avoid the problem of ITO crystallization. The experimental results show that the penetration rate of ITO/Cu structured TFT‐LCD is 3%~5% higher than that of Mo/Cu structured TFT‐LCD.