Ablation mechanism of C/C–SiC composites in supersonic oxygen‐enriched ablation environment for the internal flow field

烧蚀 材料科学 超音速 氧气 复合材料 微观结构 分析化学(期刊) 化学 色谱法 有机化学 热力学 物理 工程类 航空航天工程
作者
Yong Gao,Jin‐Jin Wang,Bailin Zha,Zhensheng Sun,Lingling Wang,Ruifeng Li
出处
期刊:International Journal of Applied Ceramic Technology [Wiley]
卷期号:21 (5): 3248-3263 被引量:1
标识
DOI:10.1111/ijac.14761
摘要

Abstract This study investigates the ablation resistance of C/C–SiC composites using the ground simulation internal flow‐field supersonic oxygen‐rich ablation test technology. The microstructure evolution and ablation mechanism of the composites in a supersonic oxygen‐rich environment were explored by examining the macroscopic and microscopic ablation morphologies of the composites before and after the test. The results demonstrate that C/C–SiC composites exhibit excellent ablation resistance, with mass and linear ablation rates of .46 × 10 −2 g/s and .42 × 10 −2 mm/s, respectively, after 120 s of ablation in a low gas temperature and high oxygen‐rich ablation thermal environment. As the gas temperature increases, the mass and linear ablation rates of C/C–SiC composites gradually increase, even though the oxygen enrichment within the gas components decreases. When the gas temperature reaches 2178–2491 K, the mass and linear ablation rates increase to 1.31 × 10 −2 g/s and .84 × 10 −2 mm/s, respectively. Furthermore, at high temperatures above 2650 K, the mass and linear ablation rates of the composites exhibit a geometric multiple increase, reaching 4.73 × 10 −2 g/s and 1.89 × 10 −2 mm/s, respectively. These findings indicate that the ablation resistance of C/C–SiC composites in the supersonic oxygen‐rich ablation environment is more sensitive to gas temperature than oxygen enrichment. The main factors contributing to the increased ablation rate of C/C–SiC composites in the supersonic oxygen‐rich ablation process include the formation of a glass SiO 2 oxide film, transition to molten SiO 2 , erosion of molten SiO 2 , and high‐temperature sublimation of the SiC matrix.
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