材料科学
纳米棒
异质结
光电子学
开路电压
光伏系统
耗尽区
化学浴沉积
硫化镉
带材弯曲
混合太阳能电池
聚合物太阳能电池
图层(电子)
工作职能
纳米技术
能量转换效率
半导体
电压
带隙
生物
物理
冶金
量子力学
生态学
作者
Rong Liu,Zhitao Shen,Liangxin Zhu,Jia Huang,Huilin Li,Junwei Chen,Chao Dong,Tao Chen,Shangfeng Yang,Chong Chen,Mingtai Wang
标识
DOI:10.1021/acsami.3c02843
摘要
Solution-processed material systems for effective photovoltaic conversion are the key to low-cost and efficient solar cells. While antimony trisulfide (Sb2S3) is a promising photovoltaic absorber, solution-processed quality Sb2S3-based heterojunction systems for solar cells, particularly with an open-circuit voltage (Voc) higher than 0.70 V, are challenging issues. Here, a cadmium sulfide (CdS) interfacial engineering method is developed for the Sb2S3-based bulk-heterojunction (BHJ) solar cells with an efficiency of 6.14% and a Voc up to 0.76 V that is the highest one among solution-processed Sb2S3 solar cells. The prepared Sb2S3-based BHJ solar cells feature a Sb2S3 nanoparticle film interdigitated by a titania (TiO2) nanorod array with a nanostructured CdS shell as an interfacial layer on each TiO2 nanorod core. Upon understanding the interfacial interactions and band alignments in the TiO2-CdS-Sb2S3 system, the function of the CdS interfacial layer as a band-bended spatial spacer interacting strongly with both the TiO2 electron transporter and Sb2S3 absorber for increasing charge collecting efficiency is revealed; moreover, space-charging the band-bended CdS layer by illumination is found and a photogenerated interfacial dipole electric field model is proposed for understanding the high Voc subjected to the presence of the CdS interfacial layer. This work provides a conceptual guide for designing efficient inorganic heterojunction solar cells.
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