材料科学
范德瓦尔斯力
图层(电子)
转印
蓝宝石
复合材料
残余应力
咬边
纳米技术
光电子学
光学
激光器
分子
物理
有机化学
化学
作者
Eric W. Blanton,Michael J. Motala,Timothy A. Prusnick,Albert Hilton,Jeff L. Brown,Arkka Bhattacharyya,Sriram Krishnamoorthy,Kevin Leedy,Nicholas R. Glavin,Michael Snure
出处
期刊:Small
[Wiley]
日期:2021-09-20
卷期号:17 (42)
被引量:6
标识
DOI:10.1002/smll.202102668
摘要
Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and 2D materials, using 2D boron nitride (BN)-on-sapphire templates are demonstrated. The van der Waals (vdW) BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for vdW bonding. A tensilely stressed Ni layer sputtered on top of the film induces controlled spalling fracture that propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity are greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a back-end selected area lift-off technique is developed which allows for isolation and transfer of individual devices or arbitrary shapes.
科研通智能强力驱动
Strongly Powered by AbleSci AI