光子学
冯·诺依曼建筑
计算机数据存储
光子
材料科学
记忆电阻器
光电子学
非易失性存储器
电子线路
神经形态工程学
逻辑门
电子工程
电阻随机存取存储器
计算机科学
纳米技术
物理
光学
计算机硬件
工程类
人工神经网络
机器学习
操作系统
作者
Ke Zhang,Dehuan Meng,Feiming Bai,Junyi Zhai,Zhong Lin Wang
标识
DOI:10.1002/adfm.202002945
摘要
Abstract Memristor‐based architectures have shown great potential for developing future computing systems beyond the era of von Neumann and Moore's law. However, the monotonous electrical input for dynamic resistance regulation limits the developments of memristors. Here, a concept of a photon‐memristive system, which realizes memristance depending on number of photons (optical inputs), is proposed. A detailed theoretical derivation is performed and the memristive characteristics, as stimulated by the optical inputs based on a hybrid system, consisting of a low‐dimension photoelectric semiconductor and a ferroelectric substrate are determined. The photon‐memristive system is also suitable for nonvolatile photonic memory since it possesses three or more‐bit data storage, desirable resistance‐change space, and an ON/OFF ratio of nearly 10 7 . The integrated circuit based on several photon‐memristive systems also realizes available photon‐triggered in‐memory computing. The photon‐memristive system expands the definition of memristors and emerges as a new data storage cell for future photonic neuromorphic computational architectures.
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