Exciton-phonon interactions in the Cs3Bi2I9crystal structure revealed by Raman spectroscopic studies

激子 光致发光 拉曼光谱 声子 拉曼散射 Crystal(编程语言) 材料科学 激发 分子物理学 光致发光激发 谱线 化学 凝聚态物理 光学 物理 光电子学 量子力学 天文 计算机科学 程序设计语言
作者
Andreea Nilă,M. Baibarac,Adelina Matea,Raul‐Augustin Mitran,I. Baltog
出处
期刊:Physica Status Solidi B-basic Solid State Physics [Wiley]
卷期号:254 (4): 1552805-1552805 被引量:39
标识
DOI:10.1002/pssb.201552805
摘要

physica status solidi (b)Volume 254, Issue 4 1552805 Original Papers (regular contributions) Exciton–phonon interactions in the Cs3Bi2I9 crystal structure revealed by Raman spectroscopic studies Andreea Nilă, Corresponding Author Andreea Nilă andreea.nila@infim.ro Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, Romania Faculty of Physics, University of Bucharest, 077125 Bucharest, Romania Corresponding author: e-mail andreea.nila@infim.ro, Phone: +40-213690170, Fax: +40-213690177Search for more papers by this authorMihaela Baibarac, Mihaela Baibarac Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this authorAdelina Matea, Adelina Matea Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this authorRaul Mitran, Raul Mitran SARA Pharm Solution, 050912 Bucharest, RomaniaSearch for more papers by this authorIoan Baltog, Ioan Baltog Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this author Andreea Nilă, Corresponding Author Andreea Nilă andreea.nila@infim.ro Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, Romania Faculty of Physics, University of Bucharest, 077125 Bucharest, Romania Corresponding author: e-mail andreea.nila@infim.ro, Phone: +40-213690170, Fax: +40-213690177Search for more papers by this authorMihaela Baibarac, Mihaela Baibarac Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this authorAdelina Matea, Adelina Matea Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this authorRaul Mitran, Raul Mitran SARA Pharm Solution, 050912 Bucharest, RomaniaSearch for more papers by this authorIoan Baltog, Ioan Baltog Lab. Optical Processes in Nanostructured Materials, National Institute of Material Physics, 77125 Bucharest, RomaniaSearch for more papers by this author First published: 24 October 2016 https://doi.org/10.1002/pssb.201552805Citations: 23Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract The enhancement of the Raman scattering in Cs3Bi2I9 is evaluated by the ratio IT/I300 K between the relative intensities of the Raman line peaked at 146 cm−1, when the spectra are recorded in the temperature range of 88–300 K, as a signature of exciton–phonon interactions. In the resonant and nonresonant conditions, excitation wavelengths 476, 561, and 660 nm, respectively, are used in order to overlap with great accuracy the bands disclosed by diffuse reflection, photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) spectra. Based on the experimental analyses, the strength of exciton–phonon interaction is dependent on the defects in the crystal and the type–range interaction of the excitations in an independent Bi2I93− cluster. The noticeable PL band, attributed to excitons trapped on different stacking faults, manifests some defects in crystal that diminish the movement of excitons. This effect significantly decreases the overlaps of excitons with the phonons, resulting in a reduced exciton–phonon coupling. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description pssb201552805-sup-0001-SupFig-S1.pdf99.9 KB Supporting Figure S1 Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume254, Issue4April 20171552805 RelatedInformation
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