光探测
单层
异质结
量子点
二硫化钨
材料科学
光电子学
光电探测器
纳米技术
冶金
作者
Yu Yu,Yating Zhang,Xiaoxian Song,Haiting Zhang,Mingxuan Cao,Yongli Che,Haitao Dai,Junbo Yang,Heng Zhang,Jianquan Yao
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2017-03-21
卷期号:4 (4): 950-956
被引量:117
标识
DOI:10.1021/acsphotonics.6b01049
摘要
Tungsten disulfide (WS2), as a typical metal dichalcogenides (TMDs), has aroused keen research interests in photodetection. Here, field effect phototransistors (FEpTs) based on heterojunction between monolayer WS2 and PbS colloidal quantum dots are demonstrated to show high photoresponsivity (up to ∼14 A/W), wide electric bandwidth (∼396 Hz), and excellent stability. Meanwhile, the devices exhibit fast photoresponse times of ∼153 μs (rise time) and ∼226 μs (fall time) due to the assistance of heterojunction on the transfer of photoexcitons. Therefore, excellent device performances strongly underscore monolayer WS2–PbS quantum dot as a promising material for future photoelectronic applications.
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