Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes

Abstract Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga 2 O 3 nanomembranes (NMs). In order to realize flexible high power β‐Ga 2 O 3 SBDs, sub‐micron thick freestanding β‐Ga 2 O 3 NMs are created from a bulk β‐Ga 2 O 3 substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga 2 O 3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga 2 O 3 SBDs exhibit the record high critical breakdown field strength ( E c ) of 1.2 MV cm −1 in the flat condition and 1.07 MV cm −1 of E c under the bending condition. Overall, flexible β‐Ga 2 O 3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high‐performance flexible applications.