欧姆接触
热离子发射
半导体
材料科学
肖特基势垒
肖特基二极管
二极管
光电子学
场电子发射
金属半导体结
纳米技术
电子
物理
量子力学
图层(电子)
作者
Tanya Blank,Yu. A. Goldberg
出处
期刊:Semiconductors
[Springer Nature]
日期:2007-11-01
卷期号:41 (11): 1263-1292
被引量:171
标识
DOI:10.1134/s1063782607110012
摘要
Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II–VI semiconductors (ZnSe, ZnO), III–V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1–0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3–0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.
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