光电二极管
瞬态(计算机编程)
光电子学
二极管
稳态(化学)
电压
等效电路
物理
短路
太阳能电池
瞬态电压抑制器
载流子寿命
瞬态响应
开路电压
硅
计算物理学
材料科学
电气工程
计算机科学
化学
工程类
操作系统
物理化学
作者
Mark Kerr,Andrés Cuevas,Ronald A. Sinton
摘要
The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
科研通智能强力驱动
Strongly Powered by AbleSci AI