Correction to Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory Switching

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionORIGINAL ARTICLEThis notice is a correctionCorrection to Nanofilament Formation and Regeneration During Cu/Al2O3 Resistive Memory SwitchingWilliam A. Hubbard, Alexander Kerelsky, Grant Jasmin, E. R. White, Jared Lodico, Matthew Mecklenburg, and B. C. Regan*Cite this: Nano Lett. 2015, 15, 8, 5665Publication Date (Web):July 8, 2015Publication History Published online8 July 2015Published inissue 12 August 2015https://pubs.acs.org/doi/10.1021/acs.nanolett.5b02648https://doi.org/10.1021/acs.nanolett.5b02648correctionACS PublicationsCopyright © 2015 American Chemical Society. This publication is available under these Terms of Use. Request reuse permissions This publication is free to access through this site. Learn MoreArticle Views853Altmetric-Citations6LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail PDF (103 KB) Get e-Alertsclose Get e-Alerts