材料科学
缓冲器(光纤)
图层(电子)
相(物质)
结晶
沉积(地质)
复合材料
化学工程
电信
古生物学
化学
有机化学
沉积物
计算机科学
工程类
生物
作者
Jiandong Zuo,Y.Q. Wang,Kai Wu,J.Y. Zhang,Gang Liu,Jun Sun
标识
DOI:10.1016/j.scriptamat.2022.114582
摘要
Hard β-Ta phase is generally produced during Ta film deposition. While in some cases, soft α-Ta phase is preferred to ensure deformation capability. In this work, templated growth strategy by introducing Cr buffer layer is proposed to tailor the phase composition in Ta films. A broad spectrum of β-Ta/α-Ta ratio from 90% to 0% can be continuously and precisely achieved when the buffer layer thickness is correspondingly controlled from 0 to ∼90 nm. Hardness of the Ta films is well proportional to the β-Ta/α-Ta ratio. The underlying mechanism of phase tailoring is rationalized by demonstrating the thickness-dependent crystallization of buffer layer.
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