异质结
外延
材料科学
曲面重建
光电子学
脉冲激光沉积
氧化物
原子单位
薄膜
化学物理
纳米技术
化学
图层(电子)
曲面(拓扑)
几何学
物理
量子力学
数学
冶金
作者
Minhui Hu,Qinghua Zhang,Lin Gu,Qinlin Guo,Yanwei Cao,M. Kareev,J. Chakhalian,Jiandong Guo
摘要
Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces is very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of atomically sharp interfaces. Here, by taking LaCoO3/SrTiO3(111) as a prototype, we show that the reconstruction, which effectively compensates the surface polarity, can stabilize the epitaxy of the heterostructure with polar discontinuity. A reconstructed substrate surface is prepared, while the growth is controlled to form reconstruction on the film surface. To suppress the chemical diffusion across the interface, the growth is interrupted between each unit cell layer to allow the lattice relaxation at a lowered temperature. In this way, high quality two-dimensional growth is realized and the heterointerfaces exhibit sharpness at the atomic scale. Our work provides a path to precisely control the growth of complex oxide heterostructures along polar orientations that exhibit emergent quantum phenomena.
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