材料科学
扫描电子显微镜
透射电子显微镜
碳化硅
碳热反应
傅里叶变换红外光谱
碳纤维
产量(工程)
高分辨率透射电子显微镜
化学工程
硅
碳化物
场发射枪
场电子发射
纳米技术
分析化学(期刊)
复合材料
冶金
电子
复合数
有机化学
化学
工程类
物理
量子力学
作者
Sanjay R. Dhage,Hyun-Choel Lee,M. Shamshi Hassan,M. Shaheer Akhtar,Chong-Yeal Kim,Jung Min Sohn,Kiju Kim,O‐Bong Yang
标识
DOI:10.1016/j.matlet.2008.09.056
摘要
The silicon carbide (SiC) nanowhiskers were obtained by a carbothermic reduction of silica (SiO2) with activated carbon at 1450 °C. The products were characterized by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). The SiC nanowhiskers were grown as crystalline β-SiC with the diameter ranging from 20 to 150 nm grew along (111) direction with the length up to several tens of micrometers. Yield of β-SiC is very high with the moderate amount of un-reacted SiO2. This is the first report on the synthesis of high yield of β-SiC by simple direct heating method.
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