外延
材料科学
再结晶(地质)
退火(玻璃)
透射电子显微镜
硅
无定形固体
激光器
卢瑟福背散射光谱法
光电子学
分析化学(期刊)
结晶学
图层(电子)
纳米技术
薄膜
光学
化学
冶金
古生物学
物理
色谱法
生物
作者
Y. F. Chong,K. L. Pey,Yongfeng Lu,Andrew T. S. Wee,T. Osipowicz,Debbie Hwee Leng Seng,A. See,Jiyan Dai
摘要
We have investigated the effect of laser annealing on the recrystallization of the preamorphized layer during the formation of ultrashallow p+/n junctions. The results from channeling Rutherford backscattering spectrometry clearly indicate that the preamorphized layer has been completely annealed with a single-pulse laser irradiation at 0.5 J/cm2. These data are further verified by high-resolution cross-sectional transmission electron microscopy. It is proposed that the preamorphized layer has recrystallized to a single-crystalline structure via liquid-phase epitaxy. No observable extended defects are present in the recrystallized region after laser annealing.
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