镓
砷化镓
氮化镓
材料科学
光电子学
二极管
纳米技术
冶金
图层(电子)
作者
Floyd Gray,Deborah A. Kramer,James D. Bliss
出处
期刊:Kirk-Othmer Encyclopedia of Chemical Technology
日期:2013-04-18
卷期号:: 1-26
被引量:23
标识
DOI:10.1002/0471238961.0701121219010215.a01.pub3
摘要
Abstract Gallium was discovered through a study of its spectral properties in 1875. It was the first element to be discovered after the publication of the Periodic Table. Gallium is scarce but not a rare element. Gallium is primarily produced as a byproduct of aluminum extraction from bauxite ores. The physical properties of gallium , especially its thermal properties, are exceptional. It has a low melting point and has the longest liquid interval of all of the elements. It is also easily supercooled. A large part of the wastes from gallium arsenide production is recovered for both environmental and economic reasons. Gallium arsenide and gallium nitride are the two important gallium compounds. They are both used in the manufacture of optoelectronic devices (laser diodes, LEDs, photodetectors, and solar cells). Integrated circuits account for the largest share of gallium use. GaAs is used in smartphones, wireless communication, defense, and aerospace.
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