Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation

We fabricated SiO2/4H-SiC (0001) metal-oxide-semiconductor capacitors with nearly ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <1011 cm−2 eV−1 for the energy range of 0.1–0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 °C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O2 anneal at 800 °C.