期刊:Applied Physics Letters [American Institute of Physics] 日期:2002-12-28卷期号:81 (27): 5126-5128被引量:130
标识
DOI:10.1063/1.1533840
摘要
We present a model calculation of the thermal conductivity of germanium nitride, silicon nitride, and carbon nitride in a temperature range in which intrinsic phonon scattering is dominant. We show that, in spite of the rather complex crystal structure of these nitrides, thermal conductivities exceeding 100 W m−1 K−1 can be attained in some of these compounds due to the combination of high Debye temperature and small Grüneisen constant.