电气工程
放大器
数据库管理
功率分配器和定向耦合器
变压器
功率带宽
电阻抗
射频功率放大器
功率增益
CMOS芯片
材料科学
工程类
电子工程
电压
作者
Kaizhe Guo,Peng Huang,Kai Kang
标识
DOI:10.1109/mwsym.2014.6848383
摘要
A 60-GHz 1.2 V power amplifier (PA) using fully symmetrical 8-way transformer power combiner is designed in 90 nm CMOS. The fully symmetrical transformer power combiner structure mitigates the impedance imbalance caused by uneven voltage coupling between primaries and secondary. At 60 GHz, impedance uniformity between four input ports of the transformer power combiner is better than 5% in real part and 7% in imaginary part. Loss of the transformer power combiner is 1 dB. At 60 GHz, small signal gain of the PA is 16.8 dB. 1-dB gain compression point output power is 17.2 dBm. Peak power-added efficiency (PAE) and saturated output power are 13.4% and 21 dBm.
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