Alok Chatterjee,Rajiv K. Kalia,Aiichiro Nakano,Andrey Omeltchenko,Kenji Tsuruta,Priya Vashishta,Chun-Keung Loong,Markus Winterer,Sylke Klein
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:2000-08-21卷期号:77 (8): 1132-1134被引量:51
标识
DOI:10.1063/1.1289661
摘要
Structure, mechanical properties, and sintering of nanostructured SiC (n-SiC) are investigated with neutron scattering and molecular-dynamics (MD) techniques. Both MD and the experiment indicate the onset of sintering around 1500 K. During sintering, the pores shrink while maintaining their morphology: the fractal dimension is ∼2 and the surface roughness exponent is ∼0.45. Structural analyses reveal that interfacial regions in n-SiC are disordered with nearly the same number of three- and fourfold coordinated Si atoms. The elastic moduli scale with the density as ∼ρμ, where μ=3.4±0.1.