材料科学
串联
硅
光电子学
钙钛矿(结构)
光电流
纳米晶材料
异质结
光伏
晶体硅
太阳能电池
能量转换效率
纳米技术
光伏系统
复合材料
电气工程
化学
结晶学
工程类
作者
Florent Sahli,Brett A. Kamino,Jérémie Werner,Matthias Bräuninger,Bertrand Paviet‐Salomon,Loris Barraud,R. Monnard,Johannes P. Seif,Andrea Tomasi,Quentin Jeangros,Aïcha Hessler‐Wyser,Stefaan De Wolf,Matthieu Despeisse,Sylvain Nicolay,Bjoern Niesen,Christophe Ballif
标识
DOI:10.1002/aenm.201701609
摘要
Abstract Perovskite/silicon tandem solar cells are increasingly recognized as promising candidates for next‐generation photovoltaics with performance beyond the single‐junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm −2 . In combination with a cesium‐based perovskite top cell, this leads to tandem cell power‐conversion efficiencies of up to 22.7% obtained from J – V measurements and steady‐state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm 2 monolithic tandem cell with a steady‐state efficiency of 18%.
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