材料科学
电致发光
光电子学
兴奋剂
基质(水族馆)
铒
离子
异质结
发光二极管
Crystal(编程语言)
薄脆饼
纳米技术
图层(电子)
化学
有机化学
程序设计语言
地质学
海洋学
计算机科学
作者
Jinxin Chen,Weijun Zhu,Yuhan Gao,Deren Yang,Xiangyang Ma
出处
期刊:Optics Express
[The Optical Society]
日期:2019-10-10
卷期号:27 (21): 30919-30919
被引量:23
摘要
We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n+-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n+-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x ≤ 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F- ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F- and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F- ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors.
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