响应度
材料科学
光电探测器
光电子学
比探测率
制作
薄膜
红外线的
带隙
吸收边
光学
基质(水族馆)
吸收(声学)
半导体
纳米技术
物理
地质学
病理
复合材料
医学
替代医学
海洋学
作者
Chaoliang Tan,Matin Amani,Chunsong Zhao,Mark Hettick,Xiaohui Song,Der‐Hsien Lien,Hao Li,Matthew Yeh,Vivek Raj Shrestha,Kenneth B. Crozier,Mary Scott,Ali Javey
标识
DOI:10.1002/adma.202001329
摘要
Abstract Semiconducting absorbers in high‐performance short‐wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single‐crystalline germanium and III–V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated Se x Te 1‐ x alloy thin films with tunable bandgaps for the fabrication of high‐performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se x Te 1‐ x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se x Te 1‐ x film‐based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al 2 O 3 to enhance its absorption near the bandgap edge, the Se 0.32 Te 0.68 film (an optical bandgap of ≈0.8 eV)‐based photoconductor exhibits a cut‐off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW −1 and implied detectivity of 6.5 × 10 10 cm Hz 1/2 W −1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se 0.32 Te 0.68 ‐based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.
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