表面改性
单层
化学
材料科学
纳米技术
物理化学
作者
He Liu,Daniel Grasseschi,Akhil Dodda,Kazunori Fujisawa,David H. Olson,Ethan Kahn,Fu Zhang,Tianyi Zhang,Yu Lei,Ricardo Braga Nogueira Branco,Ana Laura Elías,Rodolfo Cruz‐Silva,Yin‐Ting Yeh,Camila M. Maroneze,Leandro Seixas,Patrick E. Hopkins,Saptarshi Das,Christiano J. S. de Matos,Mauricio Terrones
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2020-12-03
卷期号:6 (49)
被引量:66
标识
DOI:10.1126/sciadv.abc9308
摘要
Surface functionalization of metallic and semiconducting 2D transition metal dichalcogenides (TMDs) have mostly relied on physi- and chemi-sorption at defect sites, which can diminish the potential applications of the decorated 2D materials, as structural defects can have substantial drawbacks on the electronic and optoelectronic characteristics. Here, we demonstrate a spontaneous defect-free functionalization method consisting of attaching Au single atoms to monolayers of semiconducting MoS
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