材料科学
从头算
电子结构
兴奋剂
凝聚态物理
密度泛函理论
光电子学
带隙
态密度
电子能带结构
第一原则
图层(电子)
费米能级
计算化学
物理
化学
量子力学
作者
Wu Mu-Sheng,Bo Xu,Gang Liu,Ouyang Chu-Ying
出处
期刊:Chinese Physics
[Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences]
日期:2013-01-01
卷期号:62 (3): 037103-037103
被引量:13
标识
DOI:10.7498/aps.62.037103
摘要
We study the electronic properties of Cr- and W-doped single-layer MoS2 using an ab initio method according to the density functional theory. Our calculated results show the energy band structures of MoS2 are significantly affected by Cr doping, but not by W doping at a high doping concentration. The effects of Cr doping manifest as the transition of energy band structure from direct to indirect, and the decrease of band gap. Our further analysis reveals that strain is the direct reason for the change of electronic structure in the Cr-doped MoS2.
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