材料科学
电气工程
电压
高压
足迹
机车
低压
降级（电信）
光电子学
工程类
硅
地质学
古生物学
氮化硅
作者
Jie Zeng,Raunak Kumar,Kun Liu,Aloysius P. Herlambang,Kyong Jin Hwang,Robert Gauthier
标识
DOI：10.23919/eos/esd52038.2021.9574755
摘要
A high voltage PNP device is designed with a small footprint by applying the RESURF technique. It has low turn-on resistance and high failure current. Adjusting the length of LOCOS, the PNP device shows flexibility for different voltage applications from 40V to 90V without failure current degradation.
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