Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus

凝聚态物理 电阻率和电导率 物理 量子 量子相变 电子 相变 量子力学
作者
Nasir Ali,Budhi Singh,Pawan Kumar Srivastava,Fida Ali,Myeong‐jin Lee,Hyokwang Park,Hoseong Shin,Kwangro Lee,Hyungyu Choi,Sungwon Lee,Tien Dat Ngo,Yasir Hassan,Kenji Watanabe,Takashi Taniguchi,Changgu Lee,Won Jong Yoo
出处
期刊:ACS Nano [American Chemical Society]
卷期号:18 (18): 11978-11987
标识
DOI:10.1021/acsnano.4c02432
摘要

The interplay between strong Coulomb interactions and kinetic energy leads to intricate many-body competing ground states owing to quantum fluctuations in 2D electron and hole gases. However, the simultaneous observation of quantum critical phenomena in both electron and hole regimes remains elusive. Here, we utilize anisotropic black phosphorus (BP) to show density-driven metal–insulator transition with a critical conductance ∼e2/h which highlights the significant role of quantum fluctuations in both hole and electron regimes. We observe a T-linear resistivity from the deep metallic phase to the metal–insulator boundary at moderate temperatures, while it turns to Fermi liquid behavior in the deep metallic phase at low temperatures in both regimes. An analysis of the resistivity suggests that disorder-dominated transport leads to T-linear behavior in the hole regime, while in the electron regime, the T-linear resistivity results from strong Coulomb interactions, suggestive of strange-metal behavior. Successful scaling collapse of the resistivity in the T-linear region demonstrates the link between quantum criticality and the T-linear resistivity in both regimes. Our study provides compelling evidence that ambipolar BP could serve as an exciting testbed for investigating exotic states and quantum critical phenomena in hole and electron regimes of 2D semiconductors.

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