Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

Superior performance $\beta $ -gallium oxide ( $\beta $ -Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A (@2 V) and reverse breakdown voltage of 1060 V with an area of ${3} \times {3}$ mm2 is presented. Meanwhile, the high power figure of merit (PFOM) of 0.72 GW/cm2 is attributed to the implementation of the pn heterojunction and beveled field plate for a ${0}.{1} \times {0}.{1}$ mm2 diode. The switching characteristics of large-size $\beta $ -Ga2O3 JBS after encapsulation reveal a short reverse recovery time of 26.8 ns under switching conditions of di / dt up to 400 A/ $\mu \text{s}$ . In addition, a hybrid half-wave (HW) Cockcroft–Walton (CW) voltage multiplier is built first together with commercial SiC SBD, and the results show the competitive characteristics of $\beta $ -Ga2O3 JBS for SiC SBD, such as the almost same multiplication factor up to 3.81 in four-stage hybrid voltage multipliers compared with an all-SiC SBD-based circuit. The circuit efficiency is approximately 86.07% for $\beta $ -Ga2O3 diode-based hybrid voltage multipliers. These results demonstrate the enormous application potential of $\beta $ -Ga2O3 JBS significantly.