神经形态工程学
横杆开关
记忆电阻器
光电子学
神经促进
计算机科学
超短脉冲
电阻随机存取存储器
调制(音乐)
材料科学
神经科学
电子工程
物理
电压
工程类
电气工程
人工智能
光学
电信
人工神经网络
兴奋性突触后电位
心理学
激光器
声学
抑制性突触后电位
作者
Chen Lu,Jialin Meng,Jieru Song,Tianyu Wang,Hao Zhu,Qingqing Sun,David Wei Zhang,Lin Chen
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-01-19
卷期号:24 (5): 1667-1672
被引量:19
标识
DOI:10.1021/acs.nanolett.3c04358
摘要
Researching optoelectronic memristors capable of integrating sensory and processing functions is essential for advancing the development of efficient neuromorphic vision. Here, we experimentally demonstrated an all-optical controlled and self-rectifying optoelectronic memristor (OEM) crossbar array with the function of multilevel storage under light stimuli. The NiO/TiO2 device exhibits an ultrahigh (>104) rectifying ratio (RR) thus overcoming the presence of sneak current. The reversible conductance modulation without electric signal involvement provides a novel way to realize ultrafast information processing. The proposed OEM array realized synaptic functions observed in the human brain, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), the transition from short-term memory (STM) to long-term memory (LTM), and learning experience behaviors successfully. The authors present a novel OEM crossbar that possesses complete light-modulation capabilities, potentially advancing the future development of efficient neuromorphic vision.
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