Simulation of MoS2 stacked nanosheet field effect transistor

Abstract Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS 2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench. It is found that, the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering, due to the excellent electrostatics of 2D MoS 2 . In addition, small-signal capacitance is extracted and analyzed. The MoS 2 based NSFET shows great potential to enable next generation electronics.