神经形态工程学
记忆电阻器
计算机科学
长时程增强
兴奋性突触后电位
光电子学
突触重量
神经促进
神经科学
材料科学
电子工程
人工神经网络
人工智能
工程类
心理学
抑制性突触后电位
化学
生物化学
受体
作者
Chao Lü,Jialin Meng,Tianyu Wang,Hao Zhu,Qi Sun,David Wei Zhang,Lin Chen
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-10-01
卷期号:44 (10): 1784-1787
被引量:1
标识
DOI:10.1109/led.2023.3306348
摘要
Conventional Von Neuman architectures are now experiencing significant challenges, and memristor-based neuromorphic devices have demonstrated the advantages of enabling in- memory computing. Here, we report a memristor that can be completely modulated by optical signals to modulate the device conductance, while also enabling a self-powered function. Furthermore, the device can simulate various distinguished behaviors of the human brain under pure light stimulation, such as excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), transition from short-term memory (STM) to long-term memory (LTM), and human-like brain learning behaviors, while demonstrating good reliability. By selecting light stimuli with different wavelengths, long-term potentiation (LTP) and long-term depression (LTD) can be achieved, respectively. The device reported in this letter offers the potential for neuromorphic devices in many important applications.
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