钝化
钙钛矿(结构)
材料科学
能量转换效率
图层(电子)
缓冲器(光纤)
光电子学
密度泛函理论
理论(学习稳定性)
重组
纳米技术
化学工程
化学
计算化学
计算机科学
电信
生物化学
机器学习
工程类
基因
作者
Pengyu Su,Huan Bi,Du Ran,Li Liu,Wenjing Hou,Guangzhao Wang,Wenbing Shi
标识
DOI:10.1016/j.cej.2023.145077
摘要
Perovskite solar cells (PSCs) have achieved significant success in power conversion efficiency (PCE) and stability. However, interfacial recombination and film defects still hinder the improvement of PSCs efficiency. In this study, we propose a novel interfacial buffer layer material called Ethyl p-nitrobenzoate (EPN) to enhance device performance and stability. Our results demonstrate that introducing EPN improves the film's quality, reduces defect density, relieves interfacial stress, and significantly suppresses nonradiative recombination at the interface. Density functional theory (DFT) calculations confirm that EPN can effectively passivate defects in the perovskite and SnO2 films due to its multifunctionality. Finally, we achieved a high PCE of 23.16% for the target device while significantly enhancing device stability compared to the control. This work provides new insights into the development of multifunctional multi-site interfacial buffer layers for high-performance PSCs.
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