运算跨导放大器
电容器
回转率
沉降时间
缓冲放大器
相位裕度
放大器
电容
瞬态响应
跨导
偏压
输出阻抗
物理
频率补偿
控制理论(社会学)
晶体管
CMOS芯片
运算放大器
电压
电气工程
光电子学
计算机科学
阶跃响应
工程类
控制(管理)
量子力学
控制工程
电极
人工智能
作者
Ho-Chan Ahn,Joo-Mi Cho,Hyeon-Ji Choi,Chan-Ho Lee,Chan-Kyu Lee,Sung-Wan Hong
标识
DOI:10.1109/esscirc59616.2023.10268786
摘要
This paper proposes a low-dropout regulator (LDO) which is stable over an output capacitor (Co) range from 0 to 1 $\mu$F. The proposed LDO uses an n-type power transistor ($\mathrm{M}_{\mathrm{P}}$) with a high-gain single-stage error amplifier. Since, the proposed LDO is designed as a one-pole system and the pole is generated by a large parasitic capacitance of MP and the output impedance of the error amplifier, this LDO can easily be compensated without using any compensation capacitor, which degrades the slew rate (SR). To improve the transient response and maintain stability over a wide range of Co, a dynamic negative feedback loop (DNFL) is used. In addition, the error amplifier adaptively boosts its transconductance ($\mathrm{G}_{\mathrm{m}}$) only in transition to shorten the settling time. The chip was fabricated in a 0.5$-\mu$m CMOS process with a maximum load current of 2 A.
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