半导体
晶体生长
分析化学(期刊)
带隙
材料科学
透射率
Crystal(编程语言)
薄脆饼
挥发
晶格常数
光电子学
结晶学
化学
光学
衍射
物理
有机化学
色谱法
计算机科学
程序设计语言
作者
Min Jin,Feng He,Shusen Zheng,Xu Ye,Ying Peng,Xiufei Chen,Xiangang Xu
标识
DOI:10.1002/crat.202100279
摘要
Abstract In this work, a kind of II;‐VI group ZnTe semiconductor crystal is successfully grown using a Te flux zone melting method from Zn: Te = 3: 7 mole ratio solution. The crystal has standard F43m cubic space group and the a / b / c lattice constants are all calculated to be 6.105 Å. Energy dispersive spectroscopy analysis confirms it has quasistoichiometric ratio and the Zn/Te elements are distributed in the material homogeneously. The polished 1.0 mm thickness (110) wafer exhibits a highest ≈64.5% transmittance near 2400 nm wavelength and the bandgap E g is deduced as 2.223 eV. ZnTe crystal shows a heavy volatilization start from 910 °C and the weight losing speed is about ≈1.45% min −1 . The thermal conductivity k displays good repeatability in the cooling and heating stages, the k value is about 15.8 Wm −1 K −1 at room temperature and is deceased to 3.53 Wm −1 K −1 under 500 °C. These results would be of great reference when ZnTe crystal is used for device design and application in the future.
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