极紫外光刻
光掩模
材料科学
极端紫外线
纳米技术
平版印刷术
吞吐量
过程(计算)
计算机科学
抵抗
光电子学
光学
激光器
物理
操作系统
电信
无线
图层(电子)
作者
Maria J. Cadena,Tod Robinson
摘要
Photomask technological innovation has entered a new renaissance at the cutting edge due to the transition from 193 nm to extreme ultraviolet (EUV) in high volume production. EUV has allowed the manufacture of smaller and smaller features on the mask with more complex multilayer material stacks that allow for little dimensional error in both patterning and defect repair. To meet these, and other challenges, work has continued to develop material independent AFM nanomachining processes that enable next-generation tips with increasing aspect ratios. Repair results from the current best of breed process, a novel and advanced nanomachining technique, will be analyzed on the latest platforms for production. Data will be reviewed to show the process capability for single pass repair on EUV patterns using 1.8 aspect ratio (AR) NanoBits® while also looking forward to implementation to higher AR NanoBits. The process will be evaluated for dimensional control to target, cleanliness, tip wear, and throughput in defect repair in single-digit nanometer technology node patterns.
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