Modelling of p-a-Si:H/i-a-Si:H/(n)c-Si Silicon Solar Cells by AFORS-HET Software

We have performed simulation studies using AFORS-HET software to understand how dopant concentration (i.e. acceptor concentration here) and thickness of p-layer affect the overall performance of HIT (heterojunction with thin intrinsic layer) p-a-Si:H/i-a-Si:H/(n)c-Si solar cells. Doping of p-layer is increased from 1 × 1019 cm−3 to 5 × 1020 cm−3, and thickness is varied from 5 to 15 nm. The best device performance is achieved at acceptor concentration of 1 × 1020 cm−3 and 5 nm thin p-layer. Solar cell parameters of champion device are current density (Jsc) of 38.22 mAcm−2, open circuit voltage (Voc) of 689.60 mV, fill factor (FF) of 0.83 and conversion efficiency (η) of 22.06%.