In-Plane Anomalous Hall Effect Associated with Orbital Magnetization: Measurements of Low-Carrier Density Films of a Magnetic Weyl Semimetal

Weyl半金属 凝聚态物理 霍尔效应 半金属 磁化 载流子密度 材料科学 物理 带隙 磁场 量子力学 兴奋剂
作者
Ayano Nakamura,Shinichi Nishihaya,Hiroaki Ishizuka,M. Kriener,Y. Watanabe,Masaki Uchida
出处
期刊:Physical Review Letters [American Physical Society]
卷期号:133 (23)
标识
DOI:10.1103/physrevlett.133.236602
摘要

For over a century, the Hall effect, a transverse effect under an out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even an in-plane magnetic field can induce an anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here, we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd2Sb2. Anomalous Hall resistance exhibits distinct threefold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by the in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of the in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field-induced phenomena. locked icon locked icon locked icon locked icon locked icon locked icon locked icon locked icon Physics Subject Headings (PhySH)Hall effectThin filmsWeyl semimetalMolecular beam epitaxy
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