氮化镓
材料科学
光电子学
功率半导体器件
晶体管
双极结晶体管
饱和电流
电力电子
电气工程
电压
纳米技术
工程类
图层(电子)
作者
Chuan Song,Wen Yang,Huaxing Jiang,Bin Li
标识
DOI:10.1088/1361-6641/ad95b5
摘要
Abstract In this work, a novel high current capability Gallium Nitride (GaN) Tri-gate power device with an integrated parasitic bipolar junction transistor (BJT) is proposed to enhance its static electrical characteristics. The device's electrical characteristics are thoroughly studied and analyzed using 3D Technology Computer-Aided Design (TCAD) simulation tools. The two-dimensional electron gas (2DEG) channel is effectively pinched off in the off-state due to the depletion region induced by side-gate metals and parasitic BJT, resulting in a positive threshold voltage (VTH) and enhanced mode (E-mode) operation. The parasitic BJT provides an additional conductive channel in the on-state, significantly improving the output current capability. Compared with the conventional Tri-gate (C-Trigate) device, the proposed high current capability GaN Trigate (HC-Trigate) device boosts saturation output current by nearly a factor of three under identical conditions, reaching 1,761 mA/mm. The 3D simulation shows the proposed GaN HC-Trigate power device features a positive VTH of 1.1 V, a low specific on-resistance (Ron,sp) of 0.18 mΩ*cm2 at breakdown voltage (BV) of 760 V, and the
Baliga’s figure of merit (BFOM) of 3.21 GW/cm2. Furthermore, the GaN HC-Trigate power device exhibits superior thermal performance and switching characteristics, indicating its great potential for power electronics applications.
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