单层
材料科学
范德瓦尔斯力
纳米技术
半导体
接口(物质)
氧化物
碳纤维
硅
工程物理
光电子学
化学
分子
物理
冶金
润湿
复合材料
有机化学
复合数
坐滴法
作者
Viswanath G. Akkili,Jongchan Yoon,Kihyun Shin,Jeong Sanghyun,Ji‐Yun Moon,Jun‐Hui Choi,Seung-Il Kim,Ashish A. Patil,Frederick Aziadzo,J.H. Kim,Su-Hyeon Kim,Dong‐Wook Shin,Jung‐Sub Wi,Hoon‐Hwe Cho,Joon Sik Park,Eui‐Tae Kim,Dong‐Eun Kim,Jaeyeong Heo,Graeme Henkelman,Kostya S. Novoselov
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-12-31
标识
DOI:10.1021/acsnano.4c12780
摘要
Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-
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