光子学
光电子学
材料科学
氮化物
集成光学
红外线的
光子集成电路
光学
近红外光谱
纳米技术
物理
图层(电子)
作者
Shiyang Zhu,Qize Zhong,Ting Hu,Yu Liu,Zhengji Xu,Yuan Dong,Navab Singh
标识
DOI:10.1364/ofc.2019.w2a.11
摘要
We demonstrate ultralow loss AlN single-mode channel waveguide and AlN electro-optic (EO) modulators in CMOS compatible AlN-on-insulator photonic circuits. Propagation loss was measured to be ∼0.42 dB/cm at 1550 nm and ∼2.36 dB/cm at 905 nm. A push-pull MZI modulator with arm length of 2.8 cm exhibits V of ∼21 V at 1550 nm and ∼12.9 V at 1064 nm, and modulation speed of ∼140 MHz, limited by the resistive-capacitive delay. A dual-ring modulator exhibits extension ratio of ∼12 dB and high modulation speed of ∼4 GHz because of its small footprint as compared with the MZI modulator.
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