Tunnel junction I(V) characteristics: Review and a new model for p-n homojunctions

Despite the widespread use of tunnel junctions in high-efficiency devices (e.g., multijunction solar cells, tunnel field effect transistors, and resonant tunneling diodes), simulating their behavior still remains a challenge. This paper presents a new model to complete that of Karlovsky and simulate an I(V) characteristic of an Esaki tunnel junction. A review of different analytical models of band-to-band tunneling models is first presented. As a complement to previous work on tunnel junction simulation, the transmission coefficient is precisely determined and incorporated, the valley current between the tunneling and drift regimes is included, and calculations of physical parameters are updated. It is found that the model works for a broad range of values of the forward bias.