Wannier函数
密度泛函理论
金属间化合物
兴奋剂
电子结构
凝聚态物理
二聚体
莫特绝缘子
物理
材料科学
磁性
带隙
单重态
结晶学
原子物理学
量子力学
化学
核磁共振
复合材料
激发态
合金
作者
Antía S. Botana,Yundi Quan,Warren E. Pickett
标识
DOI:10.1103/physrevb.92.155134
摘要
Insulating $\mathrm{FeGa}_{3}$ poses peculiar puzzles beyond the occurrence of an electronic gap in an intermetallic compound. This Fe-based material has a very distinctive structural characteristic with the Fe atoms occurring in dimers. The insulating gap can be described comparably well in either the weakly correlated limit or the strongly correlated limit within density functional theory viewpoints, where the latter corresponds to singlet formation on the ${\mathrm{Fe}}_{2}$ dimers. Though most of the calculated occupied Wannier functions are an admixture of Fe $3d$ and Ga $4s$ or $4p$ states, there is a single bonding-type Wannier function per spin centered on each ${\mathrm{Fe}}_{2}$ dimer. Density functional theory methods have been applied to follow the evolution of the magnetic properties and electronic spectrum with doping, where unusual behavior is observed experimentally. Both electron and hole doping are considered, by Ge and Zn on the Ga site, and by Co and Mn on the Fe site, the latter introducing direct disturbance of the ${\mathrm{Fe}}_{2}$ dimer. Results from weakly and strongly correlated pictures are compared. Regardless of the method, magnetism including itinerant phases appears readily with doping. The correlated picture suggests that in the low doping limit Mn (for Fe) produces an in-gap hole state, while Co (for Fe) introduces a localized electronic gap state.
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