Development of metal organic cluster EUV photoresists

Extreme ultraviolet (EUV) lithography, using 13.5 nm radiations, is almost ready for high volume manufacturing. EUV lithography is expected to be the main technology for manufacturing leading-edge devices and continuous improvement of lithography performance is still needed. We have developed several metal oxide containing resists and recently focused on metal organic cluster photoresists with controlled size distribution. In this paper, material properties and lithography performance of our new metal organic cluster photoresists are discussed.