材料科学
X射线
正交晶系
半导体
X射线探测器
单晶硅
探测器
分辨率(逻辑)
吸收(声学)
毫米
光电子学
高分辨率
光学
硅
物理
衍射
地质学
遥感
人工智能
计算机科学
复合材料
作者
Soumya Kundu,Devon Richtsmeier,Alexander Hart,Vishal Yeddu,Zihao Song,Guangda Niu,Deepak Thrithamarassery Gangadharan,Emma Dennis,Jiang Tang,Oleksandr Voznyy,Magdalena Bazalova‐Carter,Makhsud I. Saidaminov
标识
DOI:10.1002/adom.202200516
摘要
Abstract X‐ray detectors are used widely, but they suffer from short operational stability and insufficient absorptivity of X‐ray photons. Here, a strategy for room‐temperature, solution‐grown δ‐CsPbI 3 monocrystalline microwires exhibiting one of the highest linear X‐ray absorption coefficients among known semiconductors is reported. In a metal–semiconductor–metal architecture, δ‐CsPbI 3 demonstrates one of the lowest detectable X‐ray dose rates at 33.3 nGy air s −1 , enabled by its exceptionally low dark current density of 12 pA mm −2 . The detector remains stable following a continuous operation for a total accumulated dose of 1.44 × 10 6 Gy air , which is equivalent to 720 million chest X‐ray scans. The 1D crystalline nature of δ‐CsPbI 3 enables a high X‐ray imaging resolution of 12.4 line pairs per millimeter (lp mm −1 ).
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